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FQA10N60C Datasheet(Fiches technique) 3 Page - Fairchild Semiconductor

Numéro de pièce FQA10N60C
Description  600V N-Channel MOSFET
Télécharger  8 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA10N60C Datasheet(HTML) 3 Page - Fairchild Semiconductor

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Rev. A, October 2003
©2003 Fairchild Semiconductor Corporation
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150℃
※ Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
25℃
V
SD, Source-Drain voltage [V]
0
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
V
GS = 20V
V
GS = 10V
※ Note : T
J = 25
I
D, Drain Current [A]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom :
5.5 V
※ Notes :
1. 250μ s Pulse Test
2. T
C = 25
V
DS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
0
10
20304050
60
70
0
2
4
6
8
10
12
V
DS = 450V
V
DS = 180V
V
DS = 720V
※ Note : I
D = 11A
Q
G, Total Gate Charge [nC]
2
468
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
※ Notes :
1. V
DS = 50V
2. 250μ s Pulse Test
V
GS, Gate-Source Voltage [V]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
3500
4000
4500
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature


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