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NTE6354 Fiches technique(PDF) 2 Page - NTE Electronics

No de pièce NTE6354
Description  Silicon Power Rectifier Diode, 300 Amp
Download  3 Pages
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Fabricant  NTE [NTE Electronics]
Site Internet  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE6354 Fiches technique(HTML) 2 Page - NTE Electronics

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Electrical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum Average Forward Current
IF(AV)
180
° sinusoidal condition, TC = +130°C Max
300
A
Maximum Peak One–Cycle
IFSM
t = 10ms
No voltage
5000
A
Non–Repetitive Surge Current
t = 8.3ms
reapplied
5200
A
t = 10ms
100% VRRM
3800
A
t = 8.3ms
reapplied
Sinusoidal half wave,
4000
A
Maximum I2t for Fusing
I2t
t = 10ms
No voltage
Sinusoidal half wave,
Initial TJ = TJ max
214000
A2s
t = 8.3ms
reapplied
195000
A2s
Maximum I2t for Individual Device
t = 10ms
100% VRRM
151000
A2s
Fusing
t = 8.3ms
reapplied
138000
A2s
Maximum I2
pt
I2
pt
t = 0.1 to 10ms, no voltage reapplied
2140000
A2
pt
Maximum Value of Threshold
Voltage
VM (TO)
TJ = +200°C
0.610
V
Maximum Value of Forward Slope
Resistance
rt
TJ = +200°C
0.751
m
Thermal–Mechanical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
Maximum Operation Junction Temperature
TJ
–40 to + 180
°C
Maximum Storage Temperature
Tstg
–55 to + 180
°C
Maximum Internal Thermal Resistance
Junction–to–Case
RthJC
DC operation
0.18
K/W
Thermal Resistance, Case–to–Sink
RthCS
Mounting surface flat, smooth and
greased
0.08
K/W
Mounting Torque
T
Non–lubricated threads
40.06
(360)
m
•N
(in
•lb)


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