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OHT10CB Fiches technique(PDF) 1 Page - List of Unclassifed Manufacturers

No de pièce OHT10CB
Description  Photo transistors
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OHT10CB Fiches technique(HTML) 1 Page - List of Unclassifed Manufacturers

  OHT10CB Datasheet HTML 1Page - List of Unclassifed Manufacturers OHT10CB Datasheet HTML 2Page - List of Unclassifed Manufacturers  
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The OHT10CB is a high-sensitivity NPN silicon phototransistor
mounted in durable, hermetically sealed TO-18 metal can which provide years
of reliable performance, even under demanding conditions such as use outdoors.
FEATURES
● Narrow angular response
● Durable
● High reliability in demanding environments
● Two leads( Collector, Emitter )
APPLICATIONS
● Optical counters
● Optical detectors
● Infrared sensors
● Encoders
● Smoke detectors
ELECTRO-OPTICAL CHARACTERISTICS
Symbol
Cond.
Min.
Typ.
Max.
Unit
Collector dark current
ICEO
VCEO=10V
1
200
Light current
IL
VCE=10v,200Lux
1.5
6.0
16
C-E saturation voltage
Vce(sat)
Ic=5㎃,2000Lux
0.2
0.4
V
Rise time
tr
Vcc=10v,Ic=5㎃
8.0
usec.
Fall time
tf
RL=100Ω
10
usec.
Spectral sensitivity
λ
Peak wavelenght
λp
880
Half angle
Δθ
±15
deg.
MAXIMUM RATINGS
Symbol
Unit
C-E voltage
VCEO
V
E-C voltage
VECO
V
Collector current
Ic
Collector power dissipation
PD
mW
Operating temp.
Topr.
Storage temp.
Tstg.
Soldering temp.
(1)
Tsol.
(1)For MAX.5seconds at the position of 2mm from the package
500~1,050
Photo transistors
OHT10CB
(Ta=25℃)
( Ta=25℃ )
OPTO HiTEC.Co.,Ltd.
1
4
50
260
-30∼+125
-50∼+150
40
Item
Rating
Item
Switching speeds
150


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