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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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ISL6568 Fiches technique(PDF) 21 Page - Renesas Technology Corp |
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ISL6568 Fiches technique(HTML) 21 Page - Renesas Technology Corp |
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21 / 30 page  ISL6568 FN9187 Rev 5.00 Page 21 of 30 Jan 12, 2012 At turn-on, the upper MOSFET begins to conduct and this transition occurs over a time t2. In Equation 18, the approximate power loss is PUP,2. A third component involves the lower MOSFET reverse-recovery charge, Qrr. Since the inductor current has fully commutated to the upper MOSFET before the lower-MOSFET body diode can recover all of Qrr, it is conducted through the upper MOSFET across VIN. The power dissipated as a result is PUP,3. Finally, the resistive part of the upper MOSFET is given in Equation 20 as PUP(4). The total power dissipated by the upper MOSFET at full load can now be approximated as the summation of the results from Equations 17, 18, 19 and 20. Since the power equations depend on MOSFET parameters, choosing the correct MOSFETs can be an iterative process involving repetitive solutions to the loss equations for different MOSFETs and different switching frequencies. Package Power Dissipation When choosing MOSFETs it is important to consider the amount of power being dissipated in the integrated drivers located in the controller. Since there are a total of two drivers in the controller package, the total power dissipated by both drivers must be less than the maximum allowable power dissipation for the QFN package. Calculating the power dissipation in the drivers for a desired application is critical to ensure safe operation. Exceeding the maximum allowable power dissipation level will push the IC beyond the maximum recommended operating junction temperature of +125°C. The maximum allowable IC power dissipation for the 5x5 QFN package is approximately 4W at room temperature. See “Layout Considerations” on page 26 for thermal transfer improvement suggestions. When designing the ISL6568 into an application, it is recommended that the following calculation is used to ensure safe operation at the desired frequency for the selected MOSFETs. The total gate drive power losses, PQg_TOT, due to the gate charge of MOSFETs and the integrated driver’s internal circuitry and their corresponding average driver current can be estimated with Equations 21 and 22, respectively. In Equations 21 and 22, PQg_Q1 is the total upper gate drive power loss and PQg_Q2 is the total lower gate drive power loss; the gate charge (QG1 and QG2) is defined at the particular gate to source drive voltage PVCC in the corresponding MOSFET data sheet; IQ is the driver total quiescent current with no load at both drive outputs; NQ1 and NQ2 are the number of upper and lower MOSFETs per phase, respectively; NPHASE is the number of active phases. The IQ*VCC product is the quiescent power of the controller without capacitive load and is typically 75mW at 300kHz. (EQ. 18) PUP 2 VIN IM N ------ IP-P 2 ---------- – t2 2 ---- fS PUP 3 VIN Qrr fS = (EQ. 19) PUP 4 rDS ON IM N ------ 2 d IP-P 2 12 ---------- + (EQ. 20) FIGURE 15. TYPICAL UPPER-GATE DRIVE TURN-ON PATH PQg_TOT PQg_Q1 PQg_Q2 IQ VCC ++ = (EQ. 21) PQg_Q1 3 2 --- QG1 PVCC FSW NQ1 NPHASE = PQg_Q2 QG2 PVCC FSW NQ2 NPHASE = IDR 3 2 --- QG1 N Q1 QG2 NQ2 + N PHASE FSW IQ + = (EQ. 22) Q1 D S G RGI1 RG1 BOOT RHI1 CDS CGS CGD RLO1 PHASE PVCC UGATE |
Numéro de pièce similaire - ISL6568 |
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Description similaire - ISL6568 |
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