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STQ2NK60ZR-AP Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STQ2NK60ZR-AP
Description  Zener-Protected SuperMESH MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ2NK60ZR-AP Fiches technique(HTML) 2 Page - STMicroelectronics

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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) ISD ≤ 1.4A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
TO-220 /
IPAK
TO-92
TO-220FP
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
1.4
0.4
1.4 (*)
A
ID
Drain Current (continuous) at TC = 100°C
0.77
0.25
0.77 (*)
A
IDM ( )
Drain Current (pulsed)
5.6
1.6
5.6 (*)
A
PTOT
Total Dissipation at TC = 25°C
45
3
20
W
Derating Factor
0.36
0.025
0.16
W/°C
VESD(G-S)
Gate source ESD (HBM-C= 100pF, R=1.5k
Ω)
1500
V
VISO
Insulation Withstand Voltage (DC)
2500
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220/IPAK
TO-220FP
TO-92
Unit
Rthj-case
Thermal Resistance Junction-case Max
2.77
6.25
--
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
100
120
°C/W
Rthj-lead
Thermal Resistance Junction-lead Max
--
--
40
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
300
260
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1.4
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
90
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate source
Breakdown Voltage
Igs= ± 1 mA (Open Drain)
30
V


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