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TC7PA04FU Datasheet(Fiches technique) 4 Page - Toshiba Semiconductor

Numéro de pièce TC7PA04FU
Description  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
Télécharger  8 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TC7PA04FU Datasheet(HTML) 4 Page - Toshiba Semiconductor

   
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TC7PA04FU
2002-08-21
4
DC Characteristics (Ta
==== ----40~~~~85°°°°C, 1.8 V <<<<==== VCC < 2.3 V)
AC Electrical Characteristics (Ta
==== ----40~~~~85°°°°C, input tr ==== tf ==== 2.0 ns, CL ==== 30 pF, RL ==== 500 W
W
W
W)
Characteristics
Symbol
Test Condition
VCC (V)
Min
Max
Unit
1.8
1.0
7.4
2.5
± 0.2
0.8
3.7
Propagation delay time
tpLH
tpHL
(Figure 1 and 2)
3.3
± 0.3
0.6
2.8
ns
For CL
= 50 pF, add approximately 300 ps to the AC maximum specification.
Characteristics
Symbol
Test Condition
VCC (V)
Min
Max
Unit
High-Level Input Voltage
VIH
¾
1.8~2.3
0.7
´
VCC
¾
Low-Level Input Voltage
VIL
¾
1.8~2.3
¾
0.2
´
VCC
V
IOH = -100 mA
1.8
VCC
- 0.2
¾
High-Level Output Voltage
VOH
VIN = VIL
IOH = -6 mA
1.8
1.4
¾
IOL = 100 mA
1.8
¾
0.2
Low-Level Output Voltage
VOL
VIN = VIH
IOL = 6 mA
1.8
¾
0.3
V
Input Leakage Current
IIN
VIN = 0~3.6 V
1.8
¾
±5.0
mA
Power-off Leakage Current
IOFF
VIN, VOUT = 0~3.6 V
0
¾
10.0
mA
VIN = VCC or GND
1.8
¾
20.0
Quiescent Supply Current
ICC
VCC <= (VIN, VOUT) <= 3.6 V
1.8
¾
±20.0
mA


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