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STQ2HNK60ZR-AP Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STQ2HNK60ZR-AP
Description  N-CHANNEL 600V - 4.4廓 - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) ISD ≤ 2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.
(*) Current Limited by package
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
IPAK
TO-220FP
TO-92
VDS
Drain-source Voltage (VGS =0)
600
V
VDGR
Drain-gate Voltage (RGS =20kΩ)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC =25°C
2.0
2.0 (*)
0.5
A
ID
Drain Current (continuous) at TC = 100°C
1.26
1.26 (*)
0.32
A
IDM ( )
Drain Current (pulsed)
8
8 (*)
2
A
PTOT
Total Dissipation at TC =25°C
45
20
3
W
Derating Factor
0.36
0.16
0.025
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
2000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
--
2500
--
V
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
IPAK
TO-220FP
TO-92
Rthj-case
Thermal Resistance Junction-case Max
2.77
6.25
--
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
62.5
120
°C/W
Rthj-lead
Thermal Resistance Junction-lead Max
--
--
40
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
300
300
260
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
2A
EAS
Single Pulse Avalanche Energy
(starting Tj =25 °C, ID =IAR,VDD =50 V)
120
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V


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