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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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1N3882 Fiches technique(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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1N3882 Fiches technique(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 3 page  VRRM = 50 V - 400 V IF = 6 A Features • High Surge Capability DO-4 Package • Types up to 400 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) Unit Repetitive peak reverse V 50 100 200 300 V 1N3883 (R) 400 2. Reverse polarity (R): Stud is anode. 1N3879 thru 1N3883R Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Conditions Silicon Fast Recovery Diode pp voltage VRRM 50 100 200 300 V RMS reverse voltage VRMS 35 70 140 210 V DC blocking voltage VDC 50 100 200 300 V Continuous forward current IF 66 6 6 A Operating temperature Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Parameter Symbol 1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) Unit Diode forward voltage 1.4 1.4 1.4 1.4 15 15 15 15 μA 33 3 3 mA Recovery Time Maximum reverse recovery time TRR 200 200 200 200 nS Thermal characteristics Thermal resistance, junction - case RthJC 2.5 2.5 2.5 2.5 °C/W IF,SM 400 90 90 Reverse current IR VF 1.4 -55 to 150 -55 to 150 VR = 50 V, Tj = 25 °C IF = 6 A, Tj = 25 °C TC ≤ 100 °C Conditions 90 90 TC = 25 °C, tp = 8.3 ms Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave A 1N3883 (R) 2.5 280 6 400 90 15 IF=0.5 A, IR=1.0 A, IRR= 0.25 A VR = 50 V, Tj = 150 °C V 3 200 Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/ 1 |
Numéro de pièce similaire - 1N3882 |
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Description similaire - 1N3882 |
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