Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

1N1183 (R) 1N1184 (R)

Unit

Repetitive peak reverse voltage

50

100

V

2. Reverse polarity (R): Stud is anode.

1N1183 thru 1N1187R

1N1187 (R)

200

1N1186 (R)

Silicon Standard

Recovery Diode

Conditions

300

pp

g

RMS reverse voltage

35

70

V

DC blocking voltage

50

100

V

Continuous forward current

35

35

A

Operating temperature

-55 to 150 -55 to 150

°C

Storage temperature

-55 to 150 -55 to 150

°C

Parameter

Symbol

1N1183 (R) 1N1184 (R)

Unit

Diode forward voltage

1.2

1.2

10

10

μA

10

10

mA

Thermal characteristics

Thermal resistance, junction -

case

0.25

0.25

°C/W

10

A

595

Reverse current

595

-55 to 150

1N1187 (R)

10

10

Conditions

140

595

595

-55 to 150

35

35

0.25

1.2

1.2

10

1N1186 (R)

0.25

V

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

-55 to 150

-55 to 150

210

300

200

Surge non-repetitive forward

current, Half Sine Wave

Feb 2016

Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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