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STD100NH03L Fiches technique(PDF) 1 Page - STMicroelectronics

No de pièce STD100NH03L
Description  N-CHANNEL 30V - 0.005 W - 60A DPAK STripFET™ III POWER MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD100NH03L Fiches technique(HTML) 1 Page - STMicroelectronics

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1/11
September 2003
STD100NH03L
N-CHANNEL 30V - 0.005
Ω - 60A DPAK
STripFET™ III POWER MOSFET
s
TYPICAL RDS(on) = 0.005 Ω @ 10 V
s
RDS(ON) * Qg INDUSTRY’s BENCHMARK
s
CONDUCTION LOSSES REDUCED
s
SWITCHING LOSSES REDUCED
s
LOW THRESHOLD DEVICE
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD100NH03L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
TYPE
VDSS
RDS(on)
ID
STD100NH03L
30 V
< 0.0055
60 A(2)
1
3
DPAK
TO-252
(Suffix “T4”)
Ordering Information
ABSOLUTE MAXIMUM RATINGS
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD100NH03LT4
D100NH03L
TO-252
TAPE & REEL
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
30
V
VGS
Gate- source Voltage
± 20
V
ID(2)
Drain Current (continuous) at TC = 25°C
60
A
ID(2)
Drain Current (continuous) at TC = 100°C
60
A
IDM(3)
Drain Current (pulsed)
240
A
Ptot
Total Dissipation at TC = 25°C
100
W
Derating Factor
0.66
W/°C
EAS (4)
Single Pulse Avalanche Energy
700
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM


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