Moteur de recherche de fiches techniques de composants électroniques
Selected language     French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

KTB1234T Datasheet(Fiches technique) 1 Page - KEC(Korea Electronics)

Numéro de pièce KTB1234T
Description  EPITAXIAL PLANAR PNP TRANSISTOR
Télécharger  2 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTB1234T Datasheet(HTML) 1 Page - KEC(Korea Electronics)

  KTB1234T Datasheet HTML 1Page - KEC(Korea Electronics) KTB1234T Datenblatt HTML 2Page - KEC(Korea Electronics)  
Zoom Inzoom in Zoom Outzoom out
 1 / 2 page
background image
2001. 10. 23
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB1234T
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
DRIVER APPLICATIONS.
FEATURES
AF amplifier, solenoid drivers, LED drivers.
Darlington connection.
High DC current gain.
Very small-sized package permitting sets to be made
smaller and slimer.
Complementary to KTD1854T.
MAXIMUM RATINGS (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TSM
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K0.60
L0.55
K
B
E
H
J
J
2
1
3
+_
+_
+_
+_
+_
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-60V, IE=0
-
-
-100
nA
Emitter Cut-off Current
IEBO
VEB=-8V, IC=0
-
-
-100
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10 A, IE=0
-80
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
-50
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IC=-10 A, IC=0
-10
V
DC Current Gain
hFE 1
VCE=-2V, IC=-10mA
5000
-
-
hFE 2
VCE=-2V, IC=-100mA
3000
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-100mA, IB=-100 A
-
-0.9
-1.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=-100mA, IB=-100 A
-
-1.5
-2.0
V
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-10
V
Collector Current
DC
IC
-200
mA
Pulse
ICP
-400
Collector Power Dissipation
PC *
0.9
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
Type Name
Marking
Lot No.
S Y
COLLECTOR
BASE
EMITTER
EQUIVALENT CIRCUIT
* Package mounted on a ceramic board (600
0.8 )


Html Pages

1  2 


Datasheet Download

Go To PDF Page

Numéro de composants électroniques

Numéro de pièceDescription des composantsHtml ViewFabricant
UNR31A1Silicon PNP epitaxial planar transistor 1 2 3 Panasonic Semiconductor
BTA1036S3General Purpose PNP Epitaxial Planar Transistor 1 2 3 4 5 Cystech Electonics Corp.
BTA1759A3High Voltage PNP Epitaxial Planar Transistor 1 2 3 4 Cystech Electonics Corp.
BTB1236AL3Silicon PNP Epitaxial Planar Transistor 1 2 3 4 Cystech Electonics Corp.
BTP2907AN3General Purpose PNP Epitaxial Planar Transistor 1 2 3 4 Cystech Electonics Corp.
SUR530HEpitaxial planar PNP silicon transistor 1 2 3 AUK corp
SUR547JEpitaxial planar PNP silicon transistor 1 2 3 AUK corp
CSA733PNP SILICON PLANAR EPITAXIAL TRANSISTOR 1 2 3 4 Continental Device India Limited
KTA1505SEPITAXIAL PLANAR PNP TRANSISTOR 1 2 KEC(Korea Electronics)
HSB857JPNP EPITAXIAL PLANAR TRANSISTOR 1 2 3 4 Hi-Sincerity Mocroelectronics

Lien URL



Privacy Policy
ALLDATASHEET.FR
AllDATASHEET vous a-t-il été utile ?   [ DONATE ]  

À propos de Alldatasheet   |   Publicit   |   Contactez-nous   |   Politique de confidentialit   |   Echange de liens   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn