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FDN352AP Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDN352AP Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com April 2005 FDN352AP Rev. C FDN352AP Single P-Channel, PowerTrench® MOSFET Features ■ –1.3 A, –30V RDS(ON) = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. Applications ■ Notebook computer power management General Description This P-Channel Logic Level MOSFET is produced using Fair- child Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching perfor- mance. These devices are well suited for low voltage and battery pow- ered applications where low in-line power loss is needed in a very small outline surface mount package. Absolute Maximum Ratings TA = 25°C unless otherwise noted Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain-Source Voltage –30 V VGSS Gate-Source Voltage ±25 V ID Drain Current – Continuous (Note 1a) –1.3 A – Pulsed –10 PD Power Dissipation for Single Operation (Note 1a) 0.5 W (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 Device Marking Device Reel Size Tape width Quantity 52AP FDN352AP 7’’ 8mm 3000 units G SuperSOT™-3 G S D D G S |
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