SZNUD3112LT1G datasheet(2/7 Pages) ONSEMI

No de pièce	SZNUD3112LT1G

Description	Integrated Relay, Inductive Load Driver

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Fabricant	ONSEMI [ON Semiconductor]

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NUD3112

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MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)

Symbol

Rating

Value

Unit

VDSS

Drain to Source Voltage – Continuous

14

Vdc

VGS

Gate to Source Voltage – Continuous

6

Vdc

ID

Drain Current – Continuous

500

mA

Ez

Single Pulse Drain−to−Source Avalanche Energy (

TJinitial = 25°C)

50

mJ

TJ

Junction Temperature

150

°C

TA

Operating Ambient Temperature

−40 to 85

°C

Tstg

Storage Temperature Range

−65 to +150

°C

PD

Total Power Dissipation (Note 1)

SOT−23

Derating Above 25°C

225

1.8

mW

mW/°C

PD

Total Power Dissipation (Note 1)

SC−74

Derating Above 25°C

380

3.0

mW

mW/°C

RqJA

Thermal Resistance Junction−to−Ambient (Note 1)

SOT−23

SC−74

556

329

°C/W

ESD

Human Body Model (HBM) According to EIA/JESD22/A114

2000

V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Mounted onto minimum pad board.

TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Symbol

Characteristic

Min

Typ

Max

Unit

OFF CHARACTERISTICS

VBRDSS

Drain to Source Sustaining Voltage (Internally Clamped)

(ID = 10 mA)

14

16

17

V

BVGSO

Ig = 1.0 mA

−

8

V

IDSS

Drain to Source Leakage Current

(VDS = 12 V , VGS = 0 V, TA = 25°C)

(VDS = 12 V, VGS = 0 V, TA = 85°C)

−

20

40

mA

IGSS

Gate Body Leakage Current

(VGS = 3.0 V, VDS = 0 V)

(VGS = 5.0 V, VDS = 0 V)

−

35

65

mA

ON CHARACTERISTICS

VGS(th)

Gate Threshold Voltage

(VGS = VDS, ID = 1.0 mA)

(VGS = VDS, ID = 1.0 mA, TA = 85°C)

0.8

1.2

−

1.4

V

RDS(on)

Drain to Source On−Resistance

(ID = 250 mA, VGS = 3.0 V)

(ID = 500 mA, VGS = 3.0 V)

(ID = 500 mA, VGS = 5.0 V)

(ID = 500 mA, VGS = 3.0 V, TA=85°C)

(ID = 500 mA, VGS = 5.0 V, TA=85°C)

−

1.2

1.3

0.9

1.3

0.9

W

IDS(on)

Output Continuous Current

(VDS = 0.25 V, VGS = 3.0 V)

(VDS = 0.25 V, VGS = 3.0 V, TA = 85°C)

300

200

400

−

mA

gFS

Forward Transconductance

(VOUT = 12.0 V, IOUT = 0.25 A)

350

490

−

mmhos

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