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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF6678 Fiches technique(PDF) 1 Page - International Rectifier |
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IRF6678 Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 04/18/05 IRF6678 DirectFET™ Power MOSFET Description The IRF6678 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6678 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6678 has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including R DS(on) and gate charge to minimize losses in the SyncFET socket. PD - 96979B Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical On-Resistance vs. Gate Voltage Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for for SyncFET Socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with Existing Surface Mount Techniques Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET MOSFETs. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 23A. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Notes: SQ SX ST MQ MX MT DirectFET™ ISOMETRIC MX 0 102030405060 QG Total Gate Charge (nC) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS= 24V VDS= 15V ID= 23A VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.7m Ω@ 10V 2.3mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 43nC 15nC 4.0nC 46nC 28nC 1.8V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current A Max. 24 150 240 ±20 30 30 210 24 0 1 2 3 4 5 6 7 8 9 10 VGS, Gate -to -Source Voltage (V) 0 5 10 15 20 ID = 29A TJ = 25°C TJ = 125°C |
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Description similaire - IRF6678 |
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