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FDD24AN06LA0 Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce FDD24AN06LA0
Description  N CHANNEL LOGIC LEVEL POWER TRENCH MOSFET
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD24AN06LA0 Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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©2004 Fairchild Semiconductor Corporation
February 2004
FDD24AN06LA0 Rev. A1
FDD24AN06LA0
N-Channel Logic Level PowerTrench® MOSFET
60V, 36A, 24m
Features
•rDS(ON) = 20mΩ (Typ.), VGS = 5V, ID = 36A
•Qg(tot) = 16nC (Typ.), VGS = 5V
• Low Miller Charge
•Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 83547
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
MOSFET Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certificatio
n.
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
60
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
40
A
Continuous (TC = 25
oC, V
GS = 10V)
Continuous (TC = 25
oC, V
GS = 5V)
36
A
Continuous (TC = 100
oC, V
GS = 5V)
25
A
Continuous (TA = 25
oC, V
GS = 5V, R
θJA = 52
oC/W)
7.1
A
Pulsed
Figure 4
A
EAS
Single Pulse Avalanche Energy (Note 1)
32
mJ
PD
Power dissipation
75
W
Derate above 25
oC0.5
W/
oC
TJ, TSTG
Operating and Storage Temperature
-55 to 175
oC
RθJC
Thermal Resistance Junction to Case TO-252
2.0
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252
100
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, 1in
2 copper pad area
52
oC/W
D
G
S
GATE
SOURCE
DRAIN (FLANGE)
TO-252AA
FDD SERIES


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