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BAV99RW Fiches technique(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BAV99RW Fiches technique(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Dual series switching diode BAV99RW F007 www.gmesemi.com Rev.A 1 FEATURES Fast switching speed. High conductance. Connected in series. Surface mount package ideally suited for automatic insertion. APPLICATIONS ESD protection, polarity reversal protection, SOT-323 Data line protection, Inductive load protection. ORDERING INFORMATION Type No. Marking Package Code BAV99RW F7 SOT-323 MAXIMUM RATING @ Ta=25 ℃ unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 70 V DC Reverse voltage VR 70 V Non-Repetitive forward surge current @t=1.0s @t=1.0ms @t=1.0 μs IFSM 0.5 1.0 2.0 A Peak forward surge current IFM(surge) 500 mA Repetitive peak forward surge current IFRM 450 mA Forward continuous current IF 215 mA Average rectified forward current (averaged over any 20ms period) IF(AV) 715 mA Power dissipation Pd 200 mW Thermal resistance junction-to-ambient RθJA 625 ℃/W Operating and storage temperature range Tj,TSTG -65 to +150 ℃ Pb Lead-free |
Numéro de pièce similaire - BAV99RW |
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Description similaire - BAV99RW |
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