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2SD2504 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce 2SD2504
Description  Silicon NPN epitaxial planar type
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD2504 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

  2SD2504 Datasheet HTML 1Page - Panasonic Semiconductor 2SD2504 Datasheet HTML 2Page - Panasonic Semiconductor 2SD2504 Datasheet HTML 3Page - Panasonic Semiconductor  
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Transistors
1
Publication date: February 2003
SJC00267DED
2SD2504
Silicon NPN epitaxial planar type
For low-frequency power amplification
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Large collector current I
C
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
10
V
Collector current
IC
5A
Peak collector current *
ICP
9A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 1 mA, I
E
= 010
V
Collector-emitter voltage (Base open)
VCEO
IC = 10 µA, IB = 010
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 5 V, I
B
= 0
1.0
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IE = 0
0.1
µA
Forward current transfer ratio *
hFE1
VCE = 2 V, IC = 0.5 A
300
800
hFE2
VCE = 2 V, IC = 2 A
195
Collector-emitter saturation voltage *
VCE(sat)
IC = 3 A, IB = 0.1 A
0.28
0.50
V
Transition frequency
fT
VCB = 6 V, IE = −50 mA, f = 200 MHz
170
MHz
Collector output capacitance
Cob
VCB
= 20 V, I
E
= 0, f = 1 MHz
45
65
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Note) *: t
= 380 µs


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