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STD3PS25-1 Fiches technique(PDF) 2 Page - STMicroelectronics |
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STD3PS25-1 Fiches technique(HTML) 2 Page - STMicroelectronics |
2 / 10 page STD3PS25 - STD3PS25-1 2/10 THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON DYNAMIC Rthj-case Thermal Resistance Junction-case Max 2.77 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 250 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20 V ±10 µA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =VGS,ID = 250 µA 234 V RDS(on) Static Drain-source On Resistance VGS =10 V,ID = 0.3 A 2.1 2.8 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit Ciss Input Capacitance VDS =25V,f= 1MHz, VGS =0 260 pF Coss Output Capacitance 52 pF Crss Reverse Transfer Capacitance 25 pF RG Gate-Input Resistance f = 1 MHz,Gate DC Bias=0 Test Signal Level=20 mV Open Drain 6 Ω |
Numéro de pièce similaire - STD3PS25-1 |
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Description similaire - STD3PS25-1 |
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