SI6925ADQ datasheet(2/3 Pages) VISHAY

No de pièce	SI6925ADQ

Description	Dual N-Channel 2.5-V (G-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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SPICE Device Model Si6925ADQ

Vishay Siliconix

www.vishay.com

Document Number: 72663

2

23-May-04

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.1

V

On-State Drain Current

a

ID(on)

VDS = 5 V, VGS = 4.5 V

80

A

VGS = 4.5 V, ID = 3.9 A

0.036

0.035

VGS = 3 V, ID = 3.5 A

0.043

0.042

Drain-Source On-State Resistance

a

rDS(on)

VGS = 2.5 V, ID = 3 A

0.052

0.050

Ω

Forward Transconductance

a

gfs

VDS = 10 V, ID = 3.9 A

15

14

S

Forward Voltage

a

VSD

IS = 1 A, VGS = 0 V

0.78

0.75

V

Dynamic

b

Total Gate Charge

Qg

4

Gate-Source Charge

Qgs

0.90

Gate-Drain Charge

Qgd

VDS = 6 V, VGS = 4.5 V, ID = 3.9 A

1

nC

Turn-On Delay Time

td(on)

52

40

Rise Time

tr

28

50

Turn-Off Delay Time

td(off)

25

20

Fall Time

tf

VDD = 6 V, RL = 6 Ω

ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω

8

10

ns

Notes

a.

Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b.

Guaranteed by design, not subject to production testing.

Numéro de pièce similaire - SI6925ADQ

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI6925ADQ	222Kb / 11P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. B, 12-May-08
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Vishay Siliconix	SI6925ADQ	222Kb / 11P	Dual N-Channel 2.5-V (G-S) MOSFET Rev. B, 12-May-08

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Description similaire - SI6925ADQ

Fabricant	No de pièce	Fiches technique	Description
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