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KM29U64000T Fiches technique(PDF) 11 Page - Samsung semiconductor |
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KM29U64000T Fiches technique(HTML) 11 Page - Samsung semiconductor |
11 / 26 page KM29U64000T, KM29U64000IT FLASH MEMORY 11 Erase Flow Chart Start SR. 6 = 1 ? SR. 0 = 0 ? No * Write 60H Write Block Address Write D0H Write 70H or R/B = 1 ? Erase Error Yes No : If erase operation results in an error, map out the failing block and replace it with another block. * Erase Completed Yes Read Flow Chart Start Verify ECC No Write 00H Write Address Read Data ECC Generation Reclaim the Error Page Read Completed Yes Block Replacement When the error happens in Block "A", try to write the data into another Block "B" by reloading from an exter- nal buffer. Then, prevent further system access to Block "A"(by creating a "invalid block" table or other appropriate scheme.) Buffer memory error occurs Block A Block B : copy the corrected whole block data to another Block Replacement * block (recommended for high reliability system) * NAND Flash Technical Notes (Continued) |
Numéro de pièce similaire - KM29U64000T |
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Description similaire - KM29U64000T |
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