TS20N60PB datasheet(1/3 Pages) THINKISEMI

No de pièce	TS20N60PB

Description	20A,600V N-Channel Planar Process Power MOSFETs

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Fabricant	THINKISEMI [Thinki Semiconductor Co., Ltd.]

Site Internet	http://www.thinkisemi.com

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Pb Free Plating Product

TS20N60PB

20A,600V N-Channel Planar Process Power MOSFETs

Pb

TS20N60PB

http://www.thinkisemi.com/

Page 1/3

Rev.08C

Features

RDS(ON) = 0.36 ohm

ID = 20A

BVDSS = 600V

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▲

◀

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▲

◀

2. Drain

3. Source

1. Gate

General Description

This N-channel enhancement mode field-effect power transistor

using THINKI Semiconductor advanced planar stripe, DMOS technol-

ogy intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged

avalanche characteristics. The TO-3PB pkg is well suited for

adaptor power units,amplifiers,inverters and SMPS application.

TO-3PB

1

2

3

•

20A, 600V, R DS(on) = 0.36 Ω @VGS = 10 V

• Low gate charge ( typical 14 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175

°C maximum junction temperature rating

Electrical Characteristics @ Ta=25℃ (unless otherwise specified)

a) Absolute Maximum Ratings:

Symbol

Parameter

Value

Units

VDSS

Drain-to-Source Breakdown Voltage

600

V

ID

Drain Current (continuous) at Tc=25℃

20

A

IDM

Drain Current (pulsed)

80

A

VGS

Gate to Source Voltage

+/-30

V

Ptot

Power Dissipation at Tc=25℃

250

W

Derating Factor above 25℃

2.0

W/℃

Tj

Max. Operating Junction Temperature

175

℃

EAS

Single Pulse Avalanche Energy

1200

mJ

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