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TS20N60PB Fiches technique(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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TS20N60PB Fiches technique(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
1 / 3 page Pb Free Plating Product TS20N60PB 20A,600V N-Channel Planar Process Power MOSFETs Pb TS20N60PB © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/3 Rev.08C Features RDS(ON) = 0.36 ohm ID = 20A BVDSS = 600V ● ● ● ▲ ◀ ● ● ● ▲ ◀ 2. Drain 3. Source 1. Gate General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol- ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-3PB pkg is well suited for adaptor power units,amplifiers,inverters and SMPS application. TO-3PB 1 2 3 • 20A, 600V, R DS(on) = 0.36 Ω @VGS = 10 V • Low gate charge ( typical 14 nC) • Low Crss ( typical 20 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating Electrical Characteristics @ Ta=25℃ (unless otherwise specified) a) Absolute Maximum Ratings: Symbol Parameter Value Units VDSS Drain-to-Source Breakdown Voltage 600 V ID Drain Current (continuous) at Tc=25℃ 20 A IDM Drain Current (pulsed) 80 A VGS Gate to Source Voltage +/-30 V Ptot Power Dissipation at Tc=25℃ 250 W Derating Factor above 25℃ 2.0 W/℃ Tj Max. Operating Junction Temperature 175 ℃ EAS Single Pulse Avalanche Energy 1200 mJ |
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