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STQ1NK60ZR Fiches technique(PDF) 3 Page - STMicroelectronics |
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STQ1NK60ZR Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 14 page 3/14 STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Table 8: Dynamic Table 9: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.4 A 13 15 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = V, ID = 0.4 A 0.5 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 94 17.6 2.8 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V 11 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 300V, ID = 0.4 A RG = 4.7Ω VGS = 10 V (see Figure 21) 5.5 5 13 28 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 0.8 A, VGS = 10V (see Figure 25) 4.9 1 2.7 6.9 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 0.8 2.4 A A VSD (1) Forward On Voltage ISD = 0.8A, VGS = 0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 0.8 A, di/dt = 100A/µs VDD = 20V, Tj = 25°C (see Figure 23) 135 216 3.2 ns nC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 0.8 A, di/dt = 100A/µs VDD = 20V, Tj = 150°C (see Figure 23) 140 224 3.2 ns nC A |
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