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STQ1NK60ZR Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STQ1NK60ZR
Description  N-CHANNEL 600V 13 OHM 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STQ1NK60ZR Fiches technique(HTML) 2 Page - STMicroelectronics

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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) ISD ≤0.3A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 4: Thermal Data
(#) When mounted on 1 inch² Fr-4 board, 2 Oz Cu
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
IPAK
TO-92
SOT-223
VDS
Drain-source Voltage (VGS = 0)
600
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
600
V
VGS
Gate- source Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C
0.8
0.3
0.3
A
ID
Drain Current (continuous) at TC = 100°C
0.5
0.189
0.189
A
IDM ( )
Drain Current (pulsed)
3.2
1.2
1.2
A
PTOT
Total Dissipation at TC = 25°C
25
3
3.3
W
Derating Factor
0.24
0.025
0.026
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
800
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
IPAK
TO-92
SOT-223
Rthj-case
Thermal Resistance Junction-case Max
5
--
--
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
120
37.87(#)
°C/W
Rthj-lead
Thermal Resistance Junction-lead Max
--
40
--
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
275
260
260
°C
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
0.8
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
60
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V


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