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BGA2011 Datasheet(Fiches technique) 3 Page - NXP Semiconductors

Numéro de pièce BGA2011
Description  900 MHz high linear low noise amplifier
Télécharger  12 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
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BGA2011 Datasheet(HTML) 3 Page - NXP Semiconductors

 
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2000 Dec 04
3
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; VS =3V; IS = 15 mA; f = 900 MHz; Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction
to solder point
Ptot = 135 mW; Ts ≤ 100 °C
350
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IS
supply current
10
15
20
mA
IC
control current
0.11
mA
RLIN
return losses input
typical application; see Fig.2
−−11
dB
high IP3 (see Fig.2; stripline = 0 mm)
−−11
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
−−17
dB
RL OUT
return losses output
typical application; see Fig.2
−−11
dB
high IP3 (see Fig.2; stripline = 0 mm)
−−12
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
−−14
dB
|s21|2
insertion power gain
typical application; see Fig.2
15
dB
high IP3 (see Fig.2; stripline = 0 mm)
19
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
16
dB
NF
noise figure
typical application; see Fig.2;
IS =15mA
1.5
dB
high IP3 (see Fig.2; stripline = 0 mm)
1.6
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
1.7
dB
IP3in
input intercept point
typical application; see Fig.2
−−2
dBm
high IP3 (see Fig.2; stripline = 0 mm)
4
dBm
high IP3 (see Fig.2; stripline = 1.5 mm)
10
dBm


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