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CY7C1541KV18 Fiches technique(PDF) 1 Page - Cypress Semiconductor |
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CY7C1541KV18 Fiches technique(HTML) 1 Page - Cypress Semiconductor |
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1 / 27 page  CY7C1541KV18, CY7C1556KV18 CY7C1543KV18, CY7C1545KV18 72-Mbit QDR®II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-15700 Rev. *F Revised July 31, 2009 Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 450 MHz clock for high bandwidth ■ 4-word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz ■ Available in 2.0 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ Single multiplexed address input bus latches address inputs for read and write ports ■ Separate port selects for depth expansion ■ Synchronous internally self-timed writes ■ QDR ® II+ operates with 2.0 cycle read latency when DOFF is asserted HIGH ■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW ■ Available in x8, x9, x18, and x36 configurations ■ Full data coherency, providing most current data ■ Core VDD = 1.8V± 0.1V; IO VDDQ = 1.4V to VDD [1] ❐ Supports both 1.5V and 1.8V IO supply ■ HSTL inputs and variable drive HSTL output buffers ■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm) ■ Offered in both Pb-free and non Pb-free packages ■ JTAG 1149.1 compatible test access port ■ Phase-Locked Loop (PLL) for accurate data placement Configurations With Read Cycle Latency of 2.0 cycles: CY7C1541KV18 – 8M x 8 CY7C1556KV18 – 8M x 9 CY7C1543KV18 – 4M x 18 CY7C1545KV18 – 2M x 36 Functional Description The CY7C1541KV18, CY7C1556KV18, CY7C1543KV18, and CY7C1545KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II archi- tecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common IO devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR II+ read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words (CY7C1541KV18), 9-bit words (CY7C1556KV18), 18-bit words (CY7C1543KV18), or 36-bit words (CY7C1545KV18) that burst sequentially into or out of the device. Because data is trans- ferred into and out of the device on every rising edge of both input clocks (K and K), memory bandwidth is maximized while simpli- fying system design by eliminating bus “turn-arounds”. Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. Table 1. Selection Guide Description 450 MHz 400 MHz 375 MHz 333 MHz Unit Maximum Operating Frequency 450 400 375 333 MHz Maximum Operating Current x8 760 690 660 600 mA x9 760 690 660 600 x18 780 710 680 620 x36 1100 1000 950 850 Note 1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support VDDQ = 1.4V to VDD. [+] Feedback |
Numéro de pièce similaire - CY7C1541KV18 |
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Description similaire - CY7C1541KV18 |
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