Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

KM718V887 Fiches technique(PDF) 7 Page - Samsung semiconductor

No de pièce KM718V887
Description  256Kx18 Synchronous SRAM
Download  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM718V887 Fiches technique(HTML) 7 Page - Samsung semiconductor

Back Button KM718V887 Datasheet HTML 3Page - Samsung semiconductor KM718V887 Datasheet HTML 4Page - Samsung semiconductor KM718V887 Datasheet HTML 5Page - Samsung semiconductor KM718V887 Datasheet HTML 6Page - Samsung semiconductor KM718V887 Datasheet HTML 7Page - Samsung semiconductor KM718V887 Datasheet HTML 8Page - Samsung semiconductor KM718V887 Datasheet HTML 9Page - Samsung semiconductor KM718V887 Datasheet HTML 10Page - Samsung semiconductor KM718V887 Datasheet HTML 11Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 16 page
background image
KM718V887
256Kx18 Synchronous SRAM
- 7 -
Rev. 2.0
December 1998
DC ELECTRICAL CHARACTERISTICS(TA=0 to 70
°C, VDD=3.3V+0.3V/-0.165V)
* VIL(Min)=-2.0(Pulse Width
tCYC/2)
** VIH(Max)=4.6(Pulse Width
tCYC/2)
** In Case of I/O Pins, the Max. VIH=VDDQ+0.5V
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX
UNIT
Input Leakage Current(except ZZ)
IIL
VDD=Max ; VIN=VSS to VDD
-2
2
µA
Output Leakage Current
IOL
Output Disabled, VOUT=VSS to VDDQ
-2
2
µA
Operating Current
ICC
Device Selected, IOUT=0mA,
ZZ
≤VIL, All Inputs=VIL or VIH
Cycle Time
≥ tCYC Min
-7
-
350
mA
-8
-
325
-9
-
300
Standby Current
ISB
Device deselected, IOUT=0mA,
ZZ
≤VIL, f=Max,
All Inputs
≤0.2V or ≥ VDD-0.2V
-7
-
100
mA
-8
-
90
-9
-
80
ISB1
Device deselected, IOUT=0mA, ZZ
≤0.2V,
f=0, All Inputs=fixed (VDD-0.2V or 0.2V)
-
30
mA
ISB2
Device deselected, IOUT=0mA,
ZZ
≥VDD-0.2V, f=Max,
All Inputs
≤VIL or ≥VIH
-
30
mA
Output Low Voltage(3.3V I/O)
VOL
IOL = 8.0mA
-
0.4
V
Output High Voltage(3.3V I/O)
VOH
IOH = -4.0mA
2.4
-
V
Output Low Voltage(2.5V I/O)
VOL
IOL = 1.0mA
-
0.4
V
Output High Voltage(2.5V I/O)
VOH
IOH = -1.0mA
2.0
-
V
Input Low Voltage(3.3V I/O)
VIL
-0.5*
0.8
V
Input High Voltage(3.3V I/O)
VIH
2.0
VDD+0.5**
V
Input Low Voltage(2.5V I/O)
VIL
-0.3*
0.7
V
Input High Voltage(2.5V I/O)
VIH
1.7
VDD+0.5**
V
TEST CONDITIONS
PARAMETER
VALUE
Input Pulse Level(for 3.3V I/O)
0 to 3V
Input Pulse Level(for 2.5V I/O)
0 to 2.5V
Input Rise and Fall Time(Measured at 0.3V and 2.7V for 3.3V I/O)
2ns
Input Rise and Fall Time(Measured at 0.3V and 2.1V for 2.5V I/O)
2ns
Input and Output Timing Reference Levels for 3.3V I/O
1.5V
Input and Output Timing Reference Levels for 2.5V I/O
VDDQ/2
Output Load
See Fig. 1
(VDD=3.3V+0.3V/-0.165V,VDDQ=3.3V+0.3/-0.165V or VDD=3.3V+0.3V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0 to 70
°C)


Numéro de pièce similaire - KM718V887

FabricantNo de pièceFiches techniqueDescription
logo
Samsung semiconductor
KM718V089 SAMSUNG-KM718V089 Datasheet
536Kb / 20P
   512Kx36 & 1Mx18 Synchronous SRAM
KM718V987 SAMSUNG-KM718V987 Datasheet
574Kb / 21P
   256Kx36 & 512Kx18 Synchronous SRAM
More results

Description similaire - KM718V887

FabricantNo de pièceFiches techniqueDescription
logo
Samsung semiconductor
K7A401800M SAMSUNG-K7A401800M Datasheet
408Kb / 15P
   256Kx18 Synchronous SRAM
K7B403625B SAMSUNG-K7B403625B Datasheet
442Kb / 20P
   128Kx36 & 256Kx18 Synchronous SRAM
K7A403609B SAMSUNG-K7A403609B_06 Datasheet
419Kb / 19P
   128Kx36/x32 & 256Kx18 Synchronous SRAM
K7P403622M SAMSUNG-K7P403622M Datasheet
240Kb / 12P
   128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM736FV4021 SAMSUNG-KM736FV4021 Datasheet
350Kb / 12P
   128Kx36 & 256Kx18 Synchronous Pipelined SRAM
K7P403622B SAMSUNG-K7P403622B Datasheet
280Kb / 13P
   128Kx36 & 256Kx18 Synchronous Pipelined SRAM
K7A403600B SAMSUNG-K7A403600B Datasheet
470Kb / 18P
   128Kx36/x32 & 256Kx18 Synchronous SRAM
K7A403600B SAMSUNG-K7A403600B_06 Datasheet
418Kb / 19P
   128Kx36/x32 & 256Kx18 Synchronous SRAM
K7A403609A SAMSUNG-K7A403609A Datasheet
466Kb / 17P
   128Kx36 & 256Kx18-Bit Synchronous Pipelined Burst SRAM
K7P403623B SAMSUNG-K7P403623B Datasheet
315Kb / 13P
   128Kx36 & 256Kx18 SRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com