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PS20351-N Fiches technique(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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PS20351-N Fiches technique(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 9 page MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> PS20351-N TRANSFER-MOLD TYPE INSULATED TYPE Sep. 2001 P U V W N C Control Terminals FWD Chip Al Board Temp. measurement point (inside the Al board) 16mm 18mm IGBT Chip Power Terminals Temp. measurement point (inside the Al board) Groove Al Board Specifications: Dimensions 100 × 100 × 10mm, finishing: 12s, warp: –50~100µm 100~200 µm of evenly applied Silicon-Grease IGBT/FWD Chip 330 –20~+100 –40~+125 1500 VD = VDB = 13.5~16.5V, Inverter part Tj = 125 °C, non-repetitive, less than 2 µs (Note 2) 60Hz, Sinusoidal, 1 minute, connection pins to heat-sink plate VCC(PROT) Tf Tstg Viso V V V V mA V 20 20 –0.5~VD+0.5 –0.5~VD+0.5 15 –0.5~VD+0.5 Applied between VP1-VNC, VN1-VNC Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS Applied between UP, VP, WP-VNC, UN, VN, WN-VNC Applied between FO-VNC Sink current at FO terminal Applied between CIN-VNC Control supply voltage Control supply voltage Input voltage Fault output supply voltage Fault output current Current sensing input voltage VD VDB VCIN VFO IFO VSC 350 400 500 3 6 17.8 –20~+150 Applied between P-N Applied between P-N Tf = 25 °C Tf = 25 °C, instantaneous value (pulse) Tf = 25 °C, per 1 chip (Note 1) VCC VCC(surge) VCES ±IC ±ICP PC Tj Condition Symbol Parameter Ratings Unit Supply voltage Supply voltage (surge) Collector-emitter voltage Each IGBT collector current Each IGBT collector current (peak) Collector dissipation Junction temperature V V V A A W °C MAXIMUM RATINGS (Tj = 25 °C, unless otherwise noted) INVERTER PART Condition Symbol Parameter Ratings Unit CONTROL (PROTECTION) PART Symbol Ratings Unit Self protection supply voltage limit (short-circuit protection capability) Heat-fin operation temperature Storage temperature Isolation voltage V °C °C Vrms TOTAL SYSTEM Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150 °C (@ Tf ≤ 100°C). However, to ensure safe operation of the DIP-IPM, the average junction temperature should be limited to Tj(ave) ≤ 125°C (@ Tf ≤ 100°C). Parameter Condition Note 2 : Tf MEASUREMENT POINT |
Numéro de pièce similaire - PS20351-N |
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Description similaire - PS20351-N |
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