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PNZ107 Fiches technique(PDF) 1 Page - Panasonic Semiconductor

No de pièce PNZ107
Description  Silicon NPN Phototransistors
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

PNZ107 Fiches technique(HTML) 1 Page - Panasonic Semiconductor

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Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings
Unit
Collector to emitter voltage
VCEO
20
V
Collector to base voltage
VCBO*
30
V
Emitter to collector voltage
VECO
3V
Emitter to base voltage
VEBO*
5V
Collector current
IC
30
mA
Collector power dissipation
PC
150
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
* PNZ108 only
Features
High sensitivity : ICE(L) = 5 mA (min.) (at L = 100 lx)
Narrow directional sensitivity for effective use of light input
Fast response : tr = 5 µs (typ.)
Signal mixing capability using base pin (PNZ0108)
TO-18 standard type package
PNZ107, PNZ108 (PN107, PN108)
Silicon NPN Phototransistors
For optical control systems
Phototransistors
Glass lens
1: Emitter
2: Collector
Unit : mm
4.6 0.15
2.54 0.25
5.75 max.
2- 0.45 0.05
1
2
Glass lens
1: Emitter
2: Base
3: Collector
Unit : mm
4.6 0.15
2.54 0.25
5.75 max.
3- 0.45 0.05
1
2
3
PNZ107
PNZ108
Note) The part numbers in the parenthesis show conventional part number.


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