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UN921MJ Fiches technique(PDF) 3 Page - Panasonic Semiconductor

No de pièce UN921MJ
Description  Silicon NPN epitaxial planer type
Download  18 Pages
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Fabricant  PANASONIC [Panasonic Semiconductor]
Site Internet  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

UN921MJ Fiches technique(HTML) 3 Page - Panasonic Semiconductor

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UNR92XXJ Series
3
SJH00039AED
I Electrical Characteristics (continued) T
a = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resis-
UNR9211J/9212J/9213J/921LJ
R1/R2
0.8
1.0
1.2
tance
UNR9214J
0.17
0.21
0.25
ratio
UNR9218J/9219J
0.08
0.1
0.12
UNR921DJ
3.7
4.7
5.7
UNR921EJ
1.7
2.14
2.6
UNR921FJ
0.37
0.47
0.57
UNR921KJ
1.7
2.13
2.6
UNR921MJ
0.047
UNR921NJ
0.1
UNR921TJ
0.47
UNR921AJ/921VJ
1.0
Resistance between emitter to base UNR921CJ
R2
−30%
47
+30%
k
Characteristics chart of UNR9210J
IC  VCE
VCE(sat)  IC
hFE  IC
Common characteristics chart
PT  Ta
0
0
160
20
60
100
140
40
120
80
150
125
100
75
50
25
Ambient temperature T
a (°C)
012
210
48
6
0
60
50
40
30
20
10
Collector to emitter voltage V
CE (V)
Ta
= 25°C
IB
= 1.0 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
0.9 mA
0.01
0.03
0.1
0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
IC / IB
= 10
Ta
= 75°C
25
°C
−25°C
Collector current I
C (mA)
0
13
100
200
300
400
350
250
150
50
10
30
100
300
1 000
VCE
= 10 V
Ta
= 75°C
25
°C
−25°C
Collector current I
C (mA)


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2SD1198 Silicon NPN epitaxial planer type darlington 1  2  Panasonic Semiconductor
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2SD1819A Silicon NPN epitaxial planer type 1  2  Panasonic Semiconductor
2SD1820 Silicon NPN epitaxial planer type 1  2  Panasonic Semiconductor
2SD2598 Silicon NPN epitaxial planer type darlington For low-frequency amplification 1  2  Panasonic Semiconductor
2SD1205 Silicon NPN epitaxial planer type darlington For low-frequency amplification 1  2  Panasonic Semiconductor
2SD1820A Silicon NPN epitaxial planer type 1  2  Panasonic Semiconductor
2SC1980 Silicon NPN epitaxial planer type 1  2  Panasonic Semiconductor

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