TLP161G datasheet(3/6 Pages) TOSHIBA

No de pièce	TLP161G

Description	TOSHIBA Photocoupler GaAs Ired & Photo-Triac

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Fabricant	TOSHIBA [Toshiba Semiconductor]

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TLP161G

2002-09-25

3

Individual Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Forward voltage

VF

IF=10mA

1.0

1.15

1.3

V

Reverse current

IR

VR=5V

―

10

µA

Capacitance

CT

V=0, f=1MHz

―

30

―

pF

Peak off

-state current

IDRM

VDRM=400V

―

10

1000

nA

Peak on

-state voltage

VTM

ITM=70 mA

―

1.7

2.8

V

Holding current

IH

―

0.6

―

mA

Critical rate of rise of

off

-state voltage

dv / dt

Vin=120Vrms, Ta=85°C

(Fig.1)

200

500

―

V / µs

Critical rate of rise of

commutating voltage

dv / dt(c)

Vin=30Vrms, IT=15mA

(Fig.1)

―

0.2

―

V / µs

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Trigger LED current

IFT

VT=3V

―

5

10

mA

Inhibit voltage

VIH

IF=rated IFT

―

40

V

Leakage in inhibited state

IIH

IF=rated IFT

VT=rated VDRM

―

100

300

µA

Capacitance (input to output)

CS

VS=0, f=1MHz

―

0.8

―

pF

Isolation resistance

RS

VS=500V, R.H.≤ 60%

1×10

12

10

14

―

Ω

AC, 1 minute

2500

―

AC, 1 second, in oil

―

5000

―

Vrms

Isolation voltage

BVS

DC, 1 minute, in oil

―

5000

―

Vdc

Fig.1

dv / dt test circuit

5V，VCC

0V

dv / dt (c)

dv / dt

1

6

3

4

～

Vin

RL

2k

W

VCC

+

-

Rin

120

W

Numéro de pièce similaire - TLP161G

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	TLP161G	190Kb / 6P	Photocoupler GaAs Ired & Photo-Triac
	TLP161G	190Kb / 6P	Photocoupler GaAs Ired & Photo-Triac
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