Moteur de recherche de fiches techniques de composants électroniques |
|
IRF1503 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
IRF1503 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF1503, IIRF1503 · FEATURES · Static drain-source on-resistance: RDS(on) ≤3.3mΩ · Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=250μA) · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRITION · reliable device for use in a wide variety of applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Pulsed 960 A PD Total Dissipation @TC=25℃ 200 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.75 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃ /W |
Numéro de pièce similaire - IRF1503 |
|
Description similaire - IRF1503 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |