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TSM090N03E Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM090N03E Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 6 page 7 TSM090N03E Taiwan Semiconductor Document Number: DS_P0000212 2 Version: A15 THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 3.1 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. ELECTRICAL SPECIFICATIONS (T J = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static (Note3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.6 2.5 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 µA Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V IDSS -- -- 1 µA VDS = 24V, TJ = 125ºC -- -- 10 Forward Transconductance VDS = 10V, ID = 8A gfs -- 9.5 -- S Drain-Source On-State Resistance VGS = 10V, ID = 16A RDS(ON) -- 7.5 9 mΩ VGS = 4.5V, ID = 8A -- 9.6 14 Dynamic (Note4) Total Gate Charge VDS = 15V, ID = 20A, VGS = 4.5V Qg -- 7.7 -- nC Gate-Source Charge Qgs -- 1.9 -- Gate-Drain Charge Qgd -- 2.8 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz Ciss -- 680 -- pF Output Capacitance Coss -- 150 -- Reverse Transfer Capacitance Crss -- 70 -- Gate Resistance VGS=0V,VDS=0V, f=1MHz Rg -- 2.7 -- Ω Switching (Note5) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 Ω, I D=-15A td(on) -- 4.8 -- ns Turn-On Rise Time tr -- 12.5 -- Turn-Off Delay Time td(off) -- 27.6 -- Turn-Off Fall Time tf -- 8.2 -- Source-Drain Diode (Note3) Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1 V Continuous Drain-Source Diode VG=VD=0V Force Current IS -- -- 50 A Pulse Drain-Source Diode ISM -- -- 200 A Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V, VGS=10V, L=0.1mH, IAS=30A, RG=25 Ω, Starting TJ=25℃. 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature |
Numéro de pièce similaire - TSM090N03E |
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Description similaire - TSM090N03E |
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