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TSM090N03E Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No de pièce TSM090N03E
Description  Fast switching
Download  6 Pages
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Fabricant  TSC [Taiwan Semiconductor Company, Ltd]
Site Internet  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM090N03E Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM090N03E
Taiwan Semiconductor
Document Number: DS_P0000212
2
Version: A15
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
3.1
°C/W
Junction to Ambient Thermal Resistance
RӨJA
62
°C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air.
ELECTRICAL SPECIFICATIONS (T
J = 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
(Note3)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1.2
1.6
2.5
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±10
µA
Zero Gate Voltage Drain Current
VDS = 30V, VGS = 0V
IDSS
--
--
1
µA
VDS = 24V, TJ = 125ºC
--
--
10
Forward Transconductance
VDS = 10V, ID = 8A
gfs
--
9.5
--
S
Drain-Source On-State Resistance
VGS = 10V, ID = 16A
RDS(ON)
--
7.5
9
mΩ
VGS = 4.5V, ID = 8A
--
9.6
14
Dynamic
(Note4)
Total Gate Charge
VDS = 15V, ID = 20A,
VGS = 4.5V
Qg
--
7.7
--
nC
Gate-Source Charge
Qgs
--
1.9
--
Gate-Drain Charge
Qgd
--
2.8
--
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
Ciss
--
680
--
pF
Output Capacitance
Coss
--
150
--
Reverse Transfer Capacitance
Crss
--
70
--
Gate Resistance
VGS=0V,VDS=0V,
f=1MHz
Rg
--
2.7
--
Switching
(Note5)
Turn-On Delay Time
VDD=15V , VGS=10V ,
RG=3.3
Ω, I
D=-15A
td(on)
--
4.8
--
ns
Turn-On Rise Time
tr
--
12.5
--
Turn-Off Delay Time
td(off)
--
27.6
--
Turn-Off Fall Time
tf
--
8.2
--
Source-Drain Diode
(Note3)
Forward Voltage
VGS = 0V, IS = 1A
VSD
--
--
1
V
Continuous Drain-Source Diode
VG=VD=0V
Force Current
IS
--
--
50
A
Pulse Drain-Source Diode
ISM
--
--
200
A
Notes:
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V, VGS=10V, L=0.1mH, IAS=30A, RG=25
Ω, Starting TJ=25℃.
3.
Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
4.
For DESIGN AID ONLY, not subject to production testing.
5.
Switching time is essentially independent of operating temperature


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