BF1208 datasheet(10/22 Pages) PHILIPS

No de pièce	BF1208

Description	Dual N-channel dual gate MOSFET

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Fabricant	PHILIPS [NXP Semiconductors]

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9397 750 14254

Product data sheet

Rev. 01 — 16 March 2005

10 of 22

Philips Semiconductors

BF1208

Dual N-channel dual gate MOSFET

8.1.2 Scattering parameters for ampliﬁer A

8.1.3 Noise data for ampliﬁer A

VDS(A) =5V; VG2-S =4V; VDS(B) =VG1-S(B) =0V; ID(A) =19mA

Fig 16. Ampliﬁer A: output admittance as a function of frequency; typical values

001aac569

1

10−1

10

bos, gos

(mS)

10−2

f (MHz)

10

103

102

bos

gos

Table 9:

Scattering parameters for ampliﬁer A

VDS(A) =5V; VG2-S =4V; ID(A) = 19 mA; VDS(B) =0V;VG1-S(B) =0V; Tamb = 25 °C; typical values.

f

(MHz)

s11

s21

s12

s22

Magnitude

(ratio)

Angle

(deg)

Magnitude

(ratio)

Angle

(deg)

Magnitude

(ratio)

Angle

(deg)

Magnitude

(ratio)

Angle

(deg)

50

0.991

−3.86

3.08

175.91 0.0009

77.41

0.992

−1.41

100

0.990

−7.73

3.03

171.76 0.0019

78.10

0.991

−2.81

200

0.986

−15.43 2.99

163.68 0.0037

78.39

0.990

−5.57

300

0.980

−22.98 2.94

155.54 0.0054

73.53

0.989

−8.34

400

0.970

−30.44 2.89

147.55 0.0070

68.74

0.986

−11.08

500

0.960

−37.60 2.82

139.76 0.0085

63.64

0.983

−13.78

600

0.948

−44.62 2.75

132.16 0.0098

59.62

0.980

−16.45

700

0.935

−51.44 2.67

124.70 0.0110

55.09

0.977

−19.10

800

0.921

−58.04 2.58

117.39 0.0120

50.79

0.973

−21.69

900

0.908

−64.41 2.50

110.20 0.0128

46.62

0.970

−24.28

1000

0.894

−70.49 2.40

103.31 0.0135

42.78

0.967

−26.87

Table 10:

Noise data for ampliﬁer A

VDS(A) =5V; VG2-S =4V; ID(A) = 19 mA; VDS(B) =0V; VG1-S(B) =0V; Tamb =25 °C; typical values;

unless otherwise speciﬁed.

f (MHz)

NFmin (dB)

Γ

opt

rn (Ω)

ratio

(deg)

400

1.3

0.718

16.06

0.683

800

1.4

0.677

37.59

0.681

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