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BAP142L Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BAP142L Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 9397 750 13056 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Preliminary data sheet Rev. 01 — 27 May 2004 3 of 8 Philips Semiconductors BAP142L Silicon PIN diode s 21 2 isolation VR = 0 V; see Figure 4 f = 900 MHz - 16.0 - dB f = 1800 MHz - 11.6 - dB f = 2450 MHz - 9.9 - dB s212 insertion loss IF = 0.5 mA; see Figure 3 f = 900 MHz - 0.24 - dB f = 1800 MHz - 0.25 - dB f = 2450 MHz - 0.26 - dB s212 insertion loss IF = 1 mA; see Figure 3 f = 900 MHz - 0.18 - dB f = 1800 MHz - 0.19 - dB f = 2450 MHz - 0.21 - dB s212 insertion loss IF = 10 mA; see Figure 3 f = 900 MHz - 0.10 - dB f = 1800 MHz - 0.11 - dB f = 2450 MHz - 0.14 - dB s212 insertion loss IF = 100 mA; see Figure 3 f = 900 MHz - 0.07 - dB f = 1800 MHz - 0.09 - dB f = 2450 MHz - 0.11 - dB τL charge carrier life time when switched from IF =10mAtoIR = 6 mA; RL = 100 Ω; measured at IR =3mA - 0.12 - µs LS series inductance IF = 100 mA; f = 100 MHz - 0.6 - nH Table 6: Electrical characteristics …continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit |
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Description similaire - BAP142L |
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