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TCET1204 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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TCET1204 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number 83501 Rev. 1.5, 26-Oct-04 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Order Information G = Leadform 10.16 mm; G is not marked on the body Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Part Remarks TCET1200 CTR 50 - 600 %, DIP-4 TCET1201 CTR 40 - 80 %, DIP-4 TCET2200 CTR 50 - 600 %, DIP-8 TCET1202 CTR 63 - 125 %, DIP-4 TCET1203 CTR 100 - 200 %, DIP-4 TCET1204 CTR 160 - 320 %, DIP-4 TCET1200G CTR 50 - 600 %, DIP-4 TCET1201G CTR 40 - 80 %, DIP-4 TCET1202G CTR 63 - 125 %, DIP-4 TCET1203G CTR 100 - 200 %, DIP-4 TCET1204G CTR 160 - 320 %, DIP-4 Parameter Test condition Symbol Value Unit Reverse voltage VR 6V Forward current IF 60 mA Forward surge current tp ≤ 10 µsIFSM 1.5 A Power dissipation Pdiss 100 mW Junction temperature Tj 125 °C Parameter Test condition Symbol Value Unit Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Pdiss 150 mW Junction temperature Tj 125 °C Parameter Test condition Symbol Value Unit Isolation test voltage (RMS) VISO 5000 VRMS Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Soldering temperature 2 mm from case t ≤ 10 s Tsld 260 °C |
Numéro de pièce similaire - TCET1204 |
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Description similaire - TCET1204 |
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