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1N4007GP Fiches technique(PDF) 1 Page - Diotec Semiconductor

No de pièce 1N4007GP
Description  Standard Recovery Rectifier Diodes
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Fabricant  DIOTEC [Diotec Semiconductor]
Site Internet  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

1N4007GP Fiches technique(HTML) 1 Page - Diotec Semiconductor

  1N4007GP Datasheet HTML 1Page - Diotec Semiconductor 1N4007GP Datasheet HTML 2Page - Diotec Semiconductor  
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1N4001GP ... 1N4007GP, 1N4001-Q ... 1N4007-Q
1N4001GP ... 1N4007GP, 1N4001-Q ... 1N4007-Q
Standard Recovery Rectifier Diodes
Gleichrichterdioden mit Standard-Sperrverzug
IFAV = 1 A
VF
< 1.1 V
Tjmax = 175°C
VRRM = 50...1000 V
IFSM = 27/30 A
trr
~ 1500 ns
Version 2017-06-16
~DO-41 / ~DO-204AC
Dimensions - Maße [mm]
Typical Application
50/60 Hz Mains Rectification,
Power Supplies, Polarity Protection
Special grade 1)
Version -Q: AEC-Q101 compliant 1)
Typische Anwendung
50/60 Hz Netzgleichrichtung,
Stromversorgungen, Verpolschutz
Sonderausführung 1)
Version -Q: AEC-Q101 konform 1)
Features
Glass passivated junction
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheit
Glaspassivierte Sperrschicht
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
Taped in ammo pack
5000
Gegurtet in Ammo-Pack
Weight approx.
0.4 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 2)
Grenzwerte 2)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
1N4001GP / 1N4001-Q
50
50
1N4002GP / 1N4002-Q
100
100
1N4004GP / 1N4004-Q
400
400
1N4005GP / 1N4005-Q
600
600
1N4007GP / 1N4007-Q
1000
1000
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
TA = 100°C
IFAV
1 A 3)
0.8 A 3)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
5.4 A 3)
Peak forward surge current
Stoßstrom in Fluss-Richtung
Half sine-wave
Sinus-Halbwelle
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
27 A
30 A
Rating for fusing
Grenzlastintegral
t < 10 ms
i2t
3.6 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
3
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS
Ø 0.77
±0.07
Ø 2.6±0.2


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