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NZT605 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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NZT605 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 Absolute Maximum Ratings T C=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are baseed on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T C=25°C unless otherwise noted Thermal Characteristics T A=25°C unless otherwise noted * Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm2 Symbol Parameter Value Units VCEO Collector-Emitter Voltage 110 V VCBO Collector-Base Voltage 140 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.5 A TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ +150 °C Symbol Parameter Test Conditions Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 110 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 140 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 10 V ICBO Collector Cutoff Current VCB = 120V, IE = 0 10 nA ICES Collector Cutoff Current VCE = 120V, IE = 0 10 nA IEBO Emitter Cutoff Current VEB = 8.0V, IC = 0 100 nA On Characteristics * hFE DC Current Gain IC = 50mA, VCE = 5.0V IC = 500mA, VCE = 5.0V IC = 1.0A, VCE = 5.0V IC = 2.0A, VCE = 5.0V 2000 5000 2000 500 100K VCE(sat) Collector-Emitter Saturation Voltage IC = 250mA, IB = 0.25mA IC = 1.0A, IB = 1.0mA 1 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 1.0A, IB = 1.0mA 1.8 V VBE(on) Base-Emitter On Voltage IC = 1.0A, VCE = 5.0V 1.7 V Small Signal Characteristics fT Transition Frequency IC = 100mA, VCE = 10V, f = 20MHz 150 MHz Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25 °C 1,000 8.0 mW mW/ °C RθJA Thermal Resistance, Junction to Ambient 125 °C/W NZT605 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. SOT-223 1. Base 2.4. Collector 3. Emitter 1 2 4 3 |
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