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IRFAF50 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFAF50
Description  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFAF50 Fiches technique(HTML) 2 Page - International Rectifier

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IRFAF50
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction to Case
0.83
RthJA
Junction to Ambient
30
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
6.2
ISM
Pulse Source Current (Body Diode) ➀
——
2 5
VSD
Diode Forward Voltage
1.8
V
Tj = 25°C, IS =6.2A, VGS = 0V ➃
t rr
Reverse Recovery Time
1500
nS
Tj = 25°C, IF =6.2A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
1 1
µC
VDD ≤ 50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
9 00
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
1.2
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
1.6
VGS = 10V, ID =4.0A ➃
Resistance
1.85
VGS = 10V, ID =6.2A ➃
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
4.9
S ( )VDS > 15V, IDS =4.0A ➃
IDSS
Zero Gate Voltage Drain Current
2 5
VDS=720V, VGS=0V
250
VDS =720V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Total Gate Charge
8 0
1 8 0
VGS = 10V, ID = 6.2A
Qgs
Gate-to-Source Charge
7.5
1 7
nC
VDS = 450V
Qgd
Gate-to-Drain (‘Miller’) Charge
4 8
110
td(on)
Turn-On Delay Time
3 3
VDD = 400V*, ID =6.2A,
t r
Rise Time
6 6
RG =2.35Ω
td(off)
Turn-Off Delay Time
200
tf
Fall Time
5 7
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
2700
VGS = 0V, VDS = 25V
Coss
Output Capacitance
500
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
200
nA
µA
*Equipment Limitation


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