SP8077E datasheet(2/8 Pages) SAMHOP

No de pièce	SP8077E

Description	N-Channel Enhancement Mode Field Effect Transistor

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Fabricant	SAMHOP [SamHop Microelectronics Corp.]

Site Internet	http://www.samhop.com.tw

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2 / 8 page

Symbol

Min

Typ

Max

Units

BVDSS

30

10

IGSS

±10

uA

VGS(th)

V

4.0

CISS

1660

pF

COSS

498

pF

CRSS

456

pF

Qg

35

nC

63

61

46

tD(ON)

34

ns

tr

ns

tD(OFF)

ns

tf

ns

VDS=10V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=15V

ID=13.5A

VGS=10V

RGEN= 4.7 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=13.5A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=0.3mA

VDS=30V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=6V , ID=13.5A

4.6

5.0

6.2

m ohm

b

f=1.0MHz

b

SP8077E

Ver 1.0

www.samhop.com.tw

Dec,18,2015

2

VSD

nC

Qgs

nC

Qgd

6

9.5

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=24V,ID=13.5A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=27A

0.84

1.3

V

VDS=24V,ID=13.5A,VGS=10V

1.3

1.8

2.3

VGS=0V , ID=10mA

V

Notes

a.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.

b.Guaranteed by design, not subject to production testing.

c.Drain current limited by maximum junction temperature.

d.Mounted on FR4 Board of 1 inch2 , 2oz.

_

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