2SK3274 datasheet(4/9 Pages) RENESAS

No de pièce	2SK3274

Description	Slilicon N Channel MOS FET High Speed Power Switching

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Fabricant	RENESAS [Renesas Technology Corp]

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4 / 9 page

2SK3274 (L), 2SK3274 (S)

Rev.3.00 May 15, 2006 page 4 of 8

0.10

0.02

0.04

0.06

0.08

–40

0

40

80

120

160

0

0.1

0.3

3

10

30

100

50

20

10

2

1

5

0.5

1

25°C

Tc = –25°C

75°C

5 A, 10 A, 20 A

ID = 5 A, 10 A, 20 A

Drain Current

ID (A)

Forward Transfer Admittance vs.

Drain Current

VDS = 10 V

Pulse Test

Case Temperature

Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

0.1

0.3

1

3

10

30

100

1000

200

500

100

20

50

10

0

10203040

50

5000

2000

100

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500

1000

50

40

30

20

10

0

20

816

24

32

40

0

4

8

16

12

1000

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1

3

10

30

0.1

0.3

1

3

10

30

100

20

50

10

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

ID = 30 A

VDS

VGS

VDD = 20 V

10 V

5 V

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

tr

td(on)

td(off)

tf

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

Typical Capacitance vs.

Drain to Source Voltage

VDS (V)

Drain Current

ID (A)

Switching Characteristics

Gate Charge

Qg (nC)

Dynamic Input Characteristics

VDD = 20 V

10 V

5 V

10 V

VGS = 4.5 V

VGS = 10 V, VDD = 30 V

PW = 5

µs, duty ≤ 1 %

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