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TA4012AFE Datasheet(Fiches technique) 1 Page - Toshiba Semiconductor

Numéro de pièce TA4012AFE
Description  TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TA4012AFE
2002-01-18
1
TOSHIBA Bipolar Linear Integrated Circuit
Silicon Monolithic
TA4012AFE
UHF Wide Band Amplifier Applications
Features
· Low current: ICC = 6.5 mA
· Wide band: f = 2.0 GHz (3dB down)
· Operating supply voltage: VCC = 1.5~2.2 V
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage 1
VCC1
2.2
V
Supply voltage 2
(Note1)
VCC2
3
V
Total power dissipation
(Note2)
PD
300
mW
Operating temperature
Topr
-40~85
°C
Storage temperature
Tstg
-55~150
°C
Note1:
When VCC is operated at less than 1/4 duty cycle
Note2:
When mounted on the glass epoxy of 2.5 cm
2 ´ 1.6 t
Marking
Weight: 0.003 g (typ.)
OUT
U 4
COLLECTOR
VCC GND
IN
5
4
1
2
3




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