NTE213 datasheet(2/2 Pages) NTE

No de pièce	NTE213

Description	Germanium PNP Transistor High Power, High Gain Amplifier

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Fabricant	NTE [NTE Electronics]

Site Internet	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

ON Characteristics

DC Current Gain

hFE

VCB = 2V, IC = 5A

50

75

100

VCB = 2V, IC = 15A

25

47

–

VCB = 2V, IC = 25A

15

38

–

Collector–Emitter Saturation Voltage

VCE(sat)

IC = 5A, IB = 500mA

–

0.06

0.1

V

IC = 25A, IB = 2A

–

0.2

0.3

V

Base–Emitter ON Voltage

VBE(on)

IC = 5A, IB = 500mA

–

0.65

1.0

V

IC = 25A, IB = 2A

–

1.0

2.0

V

Dynamic Characteristics

Common–Emitter Cutoff Frequency

f

αe

VCE = 6V, IC = 5A

2.0

2.7

–

kHz

.520 (13.2)

Max

10–32 UNF–2A

.190 (4.83)

.345 (8.76)

.312 (7.93)

Collector/Case

1.005 (25.55)

Dia Max

1.250 (31.75

Dia Max

.710

(18.03)

Max

.500

(12.7)

Max

Emitter

Base

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