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SM3G45 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce SM3G45
Description  AC POWER CONTROL APPLICATIONS
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SM3G45 Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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SM3G45,SM3J45
2001-07-13
1
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM3G45,SM3J45
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V
l R.M.S ON−State Current
: IT (RMS) = 3A
l High Commutating (dv / dt)
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
SM3G45
400
Repetitive Peak
Off−State Voltage
SM3J45
VDRM
600
V
R.M.S On−State Current
(Full Sine Waveform Tc = 111°C)
IT (RMS)
3
A
30 (50Hz)
Peak One Cycle Surge On-State
Current (Non−Repetitive)
ITSM
33 (60Hz)
A
I
2
t Limit Value
I
2
t
4.5
A
2
s
Critical Rate of Rise of
On-State Current
di / dt
50
A / µs
Peak Gate Power Dissipation
PGM
5
W
Average Gate Power Dissipation
PG (AV)
0.5
W
Peak Gate Voltage
VGM
10
V
Peak Gate Current
IGM
2
A
Junction Temperature
Tj
−40~125
°C
Storage Temperature Range
Tstg
−40~125
°C
Unit: mm
JEDEC
TO−220AB
JEITA
―
TOSHIBA
13−10G1A
Weight: 2.0g


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