SM2LZ47 datasheet(2/5 Pages) TOSHIBA

No de pièce	SM2LZ47

Description	AC POWER CONTROL APPLICATIONS

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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SM2LZ47

2001-07-10

2

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN

TYP.

MAX

UNIT

Repetitive Peak Off−State Current

IDRM

VDRM = 800V

―

20

µA

I

T2 (+) , Gate (+)

―

1.5

II

T2 (+) , Gate (−)

―

1.5

Gate Trigger Voltage

III

VGT

VD = 12V,

RL = 20Ω

T2 (−) , Gate (−)

―

1.5

V

I

T2 (+) , Gate (+)

―

10

II

T2 (+) , Gate (−)

―

10

Gate Trigger Current

III

IGT

VD = 12V,

RL = 20Ω

T2 (−) , Gate (−)

―

10

mA

Peak On−State Voltage

VTM

ITM = 3A

―

2.0

V

Gate Non−Trigger Voltage

VGD

VD = 800V, Tc = 125°C

0.2

―

V

Holding Current

IH

VD = 12V, ITM = 1A

―

10

mA

Thermal Resistance

Rth (j−a)

Junction to Ambient, AC

―

58

°C / W

Critical Rate of Rise of Off−State Voltage

dv / dt

VDRM = 800V, Tj = 125°C

Exponential Rise

―

500

―

V / µs

Critical Rate of Rise of Off−State Voltage

at Communication

(dv / dt) c

VDRM = 400V, Tj = 125°C

(di / dt) c = − 0.5A / ms

5

―

V / µs

MARKING

NUMBER

SYMBOL

MARK

*1

Toshiba Product Mark

*2

TYPE

SM2LZ47

M2LZ47

*3

Example

8A : January 1998

8B : February 1998

8L : December 1998

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