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SI4856DY Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI4856DY Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si4856DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 71881 S-03662—Rev. B, 03-Apr-03 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1.0 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 70_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 40 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 17 A 0.0046 0.006 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 14 A 0.0066 0.0085 W Forward Transconductancea gfs VDS = 15 V, ID = 17 A 57 S Diode Forward Voltagea VSD IS = 2.7 A, VGS = 0 V 0.72 1.1 V Dynamicb Total Gate Charge Qg 21 30 Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 17 A 8 nC Gate-Drain Charge Qgd 7.2 Gate-Resistance RG 0.5 1.5 2.6 W Turn-On Delay Time td(on) 16 25 Rise Time tr VDD = 15 V, RL = 15 W 10 20 Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 57 90 ns Fall Time tf 16 25 Source-Drain Reverse Recovery Time trr IF = 2.7 A, di/dt = 100 A/ms 40 70 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 60 012345 VGS = 10 thru 4 V 25 _C TC = 125_C -55 _C 3 V Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) |
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