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TPS2839 Fiches technique(PDF) 8 Page - Texas Instruments

No de pièce TPS2839
Description  SYNCHRONOUS BUCK MOSFET DRIVERS WITH DRIVE REGULATOR
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

TPS2839 Fiches technique(HTML) 8 Page - Texas Instruments

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TPS2838, TPS2839
TPS2848, TPS2849
SLVS367A – MARCH 2001 – REVISED JUNE 2001
8
www.ti.com
electrical characteristics over recommended operating virtual junction temperature range,
VCC = 12 V, ENABLE = High, CL = 3.3 nF (unless otherwise noted) (continued)
low-side driver
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(VDRV) = 4 V,
V(LOWDR) = 0.5 V (src)
1
1.6
V(VDRV) = 4 V,
TJ = 25°C,
See Note 2
V(LOWDR) = 4 V (sink)
2
2.4
Peak output current
V(VDRV) = 8 V,
V(HIGHDR) = 0.5 V (src)
2
2.4
A
Peak output current
V(VDRV) = 8 V,
TJ = 25°C,
See Note 2
V(HIGHDR) = 8 V (sink)
2
3.3
A
V(VDRV) = 14 V (src),
V(HIGHDR) = 0.5 V (src)
2
3.9
V(VDRV) = 14 V (src),
TJ = 25°C,
See Note 2
V(HIGHDR) = 14 V (sink)
2
4.4
V(VDRV) = 4.5 V,
V(LOWDR) = 4 V (src)
30
V(VDRV) = 4.5 V,
TJ = 25°C
V(LOWDR) = 0.5 V (sink)
8
r
O tp t resistance
V(VDRV) = 7.5 V,
V(LOWDR) = 7 V (src)
25
ro
Output resistance
V(VDRV) = 7.5 V,
TJ = 25°C
V(LOWDR) = 0.5 V (sink)
7
V(VDRV)= 11.5 V,
V(LOWDR) = 11 V (src)
22
V(VDRV)= 11.5 V,
TJ = 25°C
V(LOWDR) = 0.5 V (sink)
6
LOWDR-to-PGND resistor
250
k
C
3 3 F
T
125
°C
V(VDRV) = 4 V
60
CL = 3.3 nF,
TJ = 125°C,
See Note 2
V(VDRV) = 8 V
50
t/t
Rise and fall time
See Note 2
V(VDRV) = 14 V
40
ns
tr/tf
Rise and fall time
C
10 F
T
125
°C
V(VDRV) = 4 V
110
ns
CL = 10 nF,
TJ = 125°C,
See Note 2
V(VDRV) = 8 V
100
See Note 2
V(VDRV) = 14 V
80
P
ti
d l
ti
LOWDR
T
125
°C
V(VDRV) = 4 V
110
ns
tPLH
Propagation delay time, LOWDR
going high (excluding deadtime)
TJ = 125°C,
See Notes 2 and 3
V(VDRV) = 8 V
90
ns
tPLH
going high (excluding deadtime)
See Notes 2 and 3
V(VDRV) = 14 V
80
ns
NOTES:
2: Ensured by design, not production tested.
3: The pullup/pulldown circuits of the drivers are bipolar and MOSFET transistors in parallel. The peak output current rating is the
combined current from the bipolar and MOSFET transistors. The output resistance is the rDS(on) of the MOSFET transistor when
the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
VCC undervoltage lockout
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Start threshold voltage
10.3
V
Stop threshold voltage
7.5
V
Vhys
Hysteresis voltage
1
1.5
V
tpd
Propagation delay time
50-mV overdrive, See Note 2
300
1000
ns
td
Falling-edge delay time
See Note 2
2
5
us
NOTE 2: Ensured by design, not production tested.


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