SI3456BDV datasheet(3/5 Pages) VISHAY

No de pièce	SI3456BDV

Description	N-Channel 30-V (D-S) MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Si3456BDV

Vishay Siliconix

Document Number: 72544

S-404024—Rev. C, 15-Mar-04

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0

100

200

300

400

500

600

700

800

0

5

10

15

20

25

30

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

0

2

4

6

8

10

0

2468

10

0.00

0.02

0.04

0.06

0.08

0.10

0

5

10

15

20

25

30

35

40

VDS − Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 15 V

ID = 6 A

ID − Drain Current (A)

VGS = 10 V

ID = 6 A

VGS = 10 V

VGS = 4.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

0.00

0.02

0.04

0.06

0.08

0.10

0

2468

10

ID = 6 A

40

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

TJ = 25_C

TJ = 150_C

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