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EC733612 Fiches technique(PDF) 1 Page - E-CMOS Corporation |
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EC733612 Fiches technique(HTML) 1 Page - E-CMOS Corporation |
1 / 6 page EC733612 30V、11.6A N-Channel MOSFET E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 6 4J01N-Rev.F002 Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous@ Current-Pulsed (Note 1) ID(25℃) 11.6 A ID(70℃) 9 A IDM 50 A Maximum Power Dissipation PD 3.1 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Description The EC733612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Features and Benefits: ◆ VDS = 30V,ID =11.6A RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V ◆ High Power and current handing capability ◆ Lead free product is acquired ◆ Surface Mount Package Application ◆ PWM applications ◆ Load switch ◆ Power management Absolute Maximum Ratings (TA=25℃unless otherwise noted) Thermal Resistance |
Numéro de pièce similaire - EC733612 |
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Description similaire - EC733612 |
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