EC732341E datasheet(2/6 Pages) E-CMOS

No de pièce	EC732341E

Description	-20V, -4A P-Channel MOS

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Fabricant	E-CMOS [E-CMOS Corporation]

Site Internet	http://www.ecmos.com.tw/

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2 / 6 page

EC732341E

-20V、

、

、-4A P-Channel MOS

E-CMOS Corp. (www.ecmos.com.tw)

Page 2 of 6

4L02N-Rev.F001

ELECTRICAL CHARACTERISTICS (TA=25℃

℃

℃unless otherwise noted)

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

-20

—

V

VGS = 0V, ID = -250µA

—

37

43

VGS=-4.5V,ID = -4A

—

45

54

VGS=-2.5V,ID = -4A

RDS(on)

Static Drain-to-Source on-resistance

—

56

73

m

VGS=-1.8V,ID = -2A

-0.3

—

-1

VDS = VGS, ID = -250µA

VGS(th)

Gate threshold voltage

—

-0.44

—

V

TJ = 125°C

—

-1

VDS = -16V,VGS = 0V

IDSS

Drain-to-Source leakage current

—

-50

µA

TJ = 125°C

—

10

VGS =8V

IGSS

Gate-to-Source forward leakage

—

-10

µA

VGS = -8V

Qg

Total gate charge

—

10

—

ID = -4A,

Qgs

Gate-to-Source charge

—

0.77

—

VDS=-10V,

Qgd

Gate-to-Drain("Miller") charge

—

3.5

—

nC

VGS = -4.5

td(on)

Turn-on delay time

—

10

—

tr

Rise time

—

8.6

—

td(off)

Turn-Off delay time

—

29

—

tf

Fall time

—

13

—

nC

VGS=-4.5V, VDS =-10V,

RGEN=3 ，

Ciss

Input capacitance

—

939

—

VGS = 0V,

Coss

Output capacitance

—

130

—

VDS =-10V,

Crss

Reverse transfer capacitance

—

111

—

pF

ƒ = 1MHz

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

IS

Continuous Source Current

(Body Diode)

—

-4

①

A

ISM

Pulsed Source Current

(Body Diode)

—

-30

A

MOSFET symbol

showing the integral

reverse

p-n junction diode.

VSD

Diode Forward Voltage

—

-0.76

-1.0

V

IS=1A, VGS=0V

trr

Reverse Recovery Time

—

8.7

—

ns

TJ = 25°C, I F =-4A,

Qrr

Reverse Recovery Charge

—

2.3

—

nC

di/dt = 100A/µs

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