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TA2069AF Datasheet(Fiches technique) 6 Page - Toshiba Semiconductor

Numéro de pièce TA2069AF
Description  TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
Télécharger  14 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TA2069AF
2002-10-30
6
Electrical Characteristics
Unless otherwise specified, VCC = 3V, Ta = 25°C, f = 1kHz, SW2: a, SW5: a
Preamplifier: Rg = 2.2kΩ, RL = 10kΩ, SW1: ON, SW3: b, SW4: b
Power amplifier: Rg = 600Ω, RL = 16Ω, Vol: Max, SW1: OPEN, SW3: a, SW4: a
Motor governor: Im = 100mA, SW1: OPEN, SW3: b, SW4: b
Characteristic
Symbol
Test
Cir
-
cuit
Test Condition
Min.
Typ.
Max.
Unit
Quiescent supply current
ICCQ
¾
PRE + PW + GVN
Vin = 0, VOL: Min, SW4: b
¾
12
18
mA
Open loop voltage gain
GVO
¾
Vo = -10dBV, SW2: b
¾
86
¾
dB
Closed loop voltage gain
GVC
¾
Vo = -10dBV
¾
35
¾
dB
maximum output voltage
Vom
¾
THD = 1%
550
720
¾
mVrms
Total harmonic distortion
THD1
¾
Vo = -10dBV
¾
0.02
0.3
%
Equivalent input noise voltage
Vni
¾
Rg = 2.2kΩ, SW1: OPEN
BPF = 20Hz~20kHz, NAB (GV
= 35dB, f = 1kHz)
¾
1.2
2.4
µVrms
Cross talk
CT1
¾
Vo = -10dBV
¾
70
¾
dB
Ripple rejection ratio
RR1
¾
fr = 100Hz, Vr = -20dBV
¾
48
¾
dB
Voltage gain 1
GV1
¾
29
31
33
dB
Channel balance
CB
¾
Vo = -10dBV
-1.5
0
+1.5
dB
Voltage gain 2
GV2
¾
Vo = -10dBV, SW5: b
¾
5
¾
dB
Output power 1
Po1
¾
RL = 16Ω, THD = 10%
17
28
¾
mW
Output power 2
Po2
¾
RL = 32Ω, THD = 10%
¾
20
¾
mW
Total harmonic distortion
THD2
¾
Po = 1mW
¾
0.5
¾
%
Output noise voltage 1
Vno1
¾
Rg = 600Ω, SW3: b
BPF = 20Hz~20kHz
¾
270
400
µVrms
Output noise voltage 2
Vno2
¾
Rg = 600Ω, SW3: b
SW5: b, BPF = 20Hz~20kHz
¾
45
¾
µVrms
Ripple rejection ratio
RR2
¾
fr = 100Hz, Vr = -20dBV
¾
52
¾
dB
Cross talk
CT2
¾
Vo = -10dBV
¾
32
¾
dB
DC volume maximum attenuation
ATT
¾
Vo = -10dBV
SW4: a→b
(VOL: Max→min)
¾
82
¾
dB
Supply current
ICC
¾
Im = 0
¾
2.5
4.3
mA
Saturation voltage
VCE (sat)
¾
Im = 200mA
¾
¾
0.5
V
Reference voltage
VREF
¾
Im = 100mA
0.76
0.81
0.86
V
Reference voltage fluctuation 1
∆VREF1
¾
VCC = 2.1~3.6V
¾
0.25
¾
% / V
Reference voltage fluctuation 2
∆VREF2
¾
Im = 25~250mA
¾
0.003
¾
% / mA
Reference voltage fluctuation 3
∆VREF3
¾
Ta =
-25~75°C
¾
0.005
¾
% / °C
Current ratio
K
¾
34.5
37.5
40.5
Current ratio fluctuation 1
∆K1
¾
VCC = 2.1~3.6V
¾
0.25
¾
% / V
Current ratio fluctuation 2
∆K2
¾
Im = 25~250mA
¾
0.08
¾
% / mA
Current ratio fluctuation 3
∆K3
¾
Ta =
-25~75°C
¾
0.005
¾
% / °C




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